850nm 28Gbps / 112Gbps GaAs PD Chip & 1X4 Array40um 850nm 28Gbps / 112Gbps SR4 QSFP28 光模块用光探测器芯片及阵列


INTRODUCTION介绍


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40um 850nm 28Gbps / 112Gbps GaAs PIN PD Chip & 1xN Array Chip (N=4, 8, 12)

OS-PD2840、OS-PD4X2840 



Features

  High data rates up to 28Gbps

  Resonsiable for 850nm

  High responsivity

  Low capacitance

  Low dark current

  Anode/Cathode Pads on Front Side



Application

   112Gbps SR4 QSFP28  

   850nm 28Gbps &1x4 1x8 1x12 Array

   Active Optical Cable (AOC) Receiver

   Short-Reach Optical Networks

  


Specification  (Tc=25℃;Single Die)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Active   area diameter

D


40


µm


Response   range

λ


850

860

nm


Responsivity

R

0.55

0.6


A/W

λ=850nm

Dark   current

ID


0.01

0.05

nA

VR=-5V

Capacitance

C


0.085

0.11

pF

VR=-2V,   f=1MHz

Bandwidth

Bw


20.0

22.0

GHz

3dB down,   RL=50Ω


Die size


250X250

µm

For   Single Die

250 X 1000

For 1x4 Array

250 X 2000

For 1x8 Array



上一篇850nm 10Gbps / 40Gbps GaAs PIN PD Chip & Array
下一篇850nm 2.5G GaAs PIN PD Chip - OS-GaAs75

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