25Gbps InGaAs PIN &1x4 Array PD Chip － OS-PD2520、OS-PD4x2520
Features
Data rate up to 25Gbps &100Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Diode on Semi Insulating Substrates
Anode/Cathode Pads on Front Side
Application
10G-EPON
IEEE 100 Gigabit Ethernet (1x4 Array)
Data Center
Long-haul optical networks
Specification (Tc=25℃，Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 20 | µm | |||
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.8 | 0.85 | A/W | λ=1310nm | |
0.9 | λ=1550nm | |||||
Dark current | ID | 0.04 | 0.10 | nA | VR=5V | |
Capacitance | C | 0.07 | 0.10 | pF | VR=2V, f=1MHz | |
Bandwidth | Bw | 23.0 | GHz | 3dB down, RL=50Ω | ||
Die size | 250X340 | µm | For Single Die | |||
250X1360 | For 1x4 Array | |||||
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